Posts Tagged: "Dr. Bantval Jayant Baliga"

Evo of Tech: B. The insulated gate bipolar transistor has improved U.S. electrical efficiency by 40 percent

Sunday, November 6th marks the 26th anniversary of the first U.S. patent issued to Baliga for which he was inducted into the National Inventors Hall of Fame. U.S. Patent No. 4969028, which is titled Gate Enhanced Rectifier. It claimed a gate-controlled semiconductor power device having a body of semiconductor material with regions of opposing types of conductivity forming a p-n junction, two power electrodes disposed in ohmic contact with different regions of the semiconductor material, an insulated gate electrode disposed on a surface to control the conduction of opposite type conductivity carriers in a channel to either induce an opposite conductivity or repress the channel’s conductivity. The resulting semiconductor device achieves both forward and reverse blocking capability and can be switched on and off with a low power requirement.

Reinventing our Climate Future

On Wednesday, June 29th, the United States Patent and Trademark Office hosted a panel titled Innovation to Power the Nation (and the World): Reinventing our Climate Future. This panel featured several important players involved in climate change within the United States. USPTO Director Michelle Lee delivered the keynote address while the panel was moderated by Amy Harder of the Wall Street Journal, who posed interesting and through provoking questions to the panelists. The panel comprised, Dr. Kristina Johnson, Chief Executive Officer of Cube Hydro Partners, Dr. Bantval Jayant Baliga, Director of the Power Semiconductor Research Center at North Carolina State University, Bob Perciasepe, President of the Center or Climate Change and Energy Solutions, and Nathan Hurst, Chief Sustainability & Social Impact Officer at Hewlett Packard, Inc.