Posts Tagged: "insulated gate bipolar transistor"

Sunday, November 6th marks the 26th anniversary of the first U.S. patent issued to Baliga for which he was inducted into the National Inventors Hall of Fame. U.S. Patent No. 4969028, which is titled Gate Enhanced Rectifier. It claimed a gate-controlled semiconductor power device having a body of semiconductor material with regions of opposing types of conductivity forming a p-n junction, two power electrodes disposed in ohmic contact with different regions of the semiconductor material, an insulated gate electrode disposed on a surface to control the conduction of opposite type conductivity carriers in a channel to either induce an opposite conductivity or repress the channel’s conductivity. The resulting semiconductor device achieves both forward and reverse blocking capability and can be switched on and off with a low power requirement.